| Description | www.DataSheet4U.com Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFK 52N60Q2 IXFX 52N60Q2 VDSS ID25 RDS(on) = = = 600 V 52 A 115 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt... |
| Features | z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammabili... |
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IXYS |
Power MOSFET |
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IXYS Corporation |
Power MOSFET |
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IXYS Corporation |
Power MOSFET |
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IXYS |
Power MOSFET |
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IXYS Corporation |
Power MOSFET |
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IXYS Corporation |
HiPerFET Power MOSFETs |
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IXYS Corporation |
HiPerFET Power MOSFETs |
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IXYS |
Power MOSFET |
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IXYS Corporation |
Polar MOSFETs |
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IXYS Corporation |
HiPerFET Power MOSFETs |
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