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FDMC2610 |
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| Part Number | FDMC2610 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 200mΩ at VGS = 10V, ... |
| Features |
General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm RoHS Compliant
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Application
DC - DC Conversion
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Top
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MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage -Continuous (... |
| Document |
 FDMC2610 Data Sheet
PDF 389.96KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC2610 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMC2674 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
|
| 3 | FDMC2674 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMC2512SDC |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC2514SDC |
Fairchild Semiconductor |
N-Channel Dual Cool PowerTrench SyncFET |
|
| 6 | FDMC2514SDC |
VBsemi |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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