IRLR024Z International Rectifier Power MOSFET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

IRLR024Z

International Rectifier
IRLR024Z
IRLR024Z IRLR024Z
zoom Click to view a larger image
Part Number IRLR024Z
Manufacturer International Rectifier
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ...
Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 58mΩ ID = 16A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient...

Document Datasheet IRLR024Z Data Sheet
PDF 215.67KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IRLR024
International Rectifier
(IRLU/R024) Power MOSFET Datasheet
2 IRLR024
Samsung Electronics
N-Channel MOSFET Datasheet
3 IRLR024
Vishay
Power MOSFET Datasheet
4 IRLR024N
International Rectifier
Power MOSFET Datasheet
5 IRLR024N
INCHANGE
N-Channel MOSFET Datasheet
6 IRLR024NPBF
International Rectifier
HEXFET Power MOSFET Datasheet
More datasheet from International Rectifier
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad