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BUZ906DP |
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| Part Number | BUZ906DP |
| Manufacturer | ETC |
| Description | MAGNA TEC 20.0 5.0 BUZ905DP BUZ906DP MECHANICAL DATA Dimensions in mm 3.3 Dia. P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • ... |
| Features |
1
2.0
2
3
2.0 1.0
• HIGH SPEED SWITCHING • P –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N –CHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO –3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power... |
| Document |
 BUZ906DP Data Sheet
PDF 40.00KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ906 |
Magnatec |
P-CHANNEL POWER MOSFET |
|
| 2 | BUZ906P |
ETC |
(BUZ905P / BUZ906P) P-CHANNEL POWER MOSFET |
|
| 3 | BUZ906X4S |
ETC |
P-CHANNEL POWER MOSFET |
|
| 4 | BUZ90 |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ90 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | BUZ900 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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