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MRF174 |
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| Part Number | MRF174 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode • Guaranteed Performance at 150 MHz, 28 Vdc Out... |
| Features |
± 40 13 270 1.54 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF174 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Ga... |
| Document |
 MRF174 Data Sheet
PDF 168.06KB |
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