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| Part Number | MRF173 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MRF173 |
| Manufacturer | Motorola |
| Title | (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband perfor. |
| Features |
a vertical structure with a planar design, thus avoiding the processing difficulties associated with V –groove power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal . |
| Part Number | MRF173 |
| Manufacturer | MA-COM |
| Title | The RF MOSFET |
| Description | MRF173 The RF MOSFET Line 80W, 175MHz, 28V Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel en. |
| Features | . |
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|---|---|---|---|---|
| 1 | MRF171A |
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| 4 | MRF173CQ |
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| 6 | MRF174 |
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| 8 | MRF175GU |
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| 9 | MRF175GV |
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| 10 | MRF175LU |
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Desde 2024. D4U Semiconductor.
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