MRF137 |
Part Number | MRF137 |
Manufacturer | Tyco Electronics |
Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and drive... |
Features |
ing Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±40 5.0 100 0.571 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.75 Unit °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 1 MRF137 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Brea... |
Document |
MRF137 Data Sheet
PDF 213.39KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MRF134 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET | |
2 | MRF134 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FET | |
3 | MRF136 |
MA-COM |
The RF MOSFET | |
4 | MRF136 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET | |
5 | MRF136 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FETs | |
6 | MRF136 |
ASI |
RF POWER FIELD-EFFECT TRANSISTOR |