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| Part Number | MRF136 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MRF136 |
| Manufacturer | Tyco Electronics |
| Title | N-CHANNEL MOS BROADBAND RF POWER FET |
| Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. • Guaranteed 28. |
| Features |
PD Tstg TJ Value 65 65 ± 40 2.5 55 0.314 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 3.2 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 1 ELECTRICAL CHARACTERI. |
| Part Number | MRF136 |
| Manufacturer | Motorola |
| Title | N-CHANNEL MOS BROADBAND RF POWER FETs |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull c. |
| Features |
E 319B –02, STYLE 1 MRF136Y D MAXIMUM RATINGS Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ 2.5 55 0.314 Value MRF136 65 65 ± 40 5.0 100 0.571 MRF136Y 65 65 Unit Vdc Vdc Vdc Adc Watts W/°C °. |
| Part Number | MRF136 |
| Manufacturer | ASI |
| Title | RF POWER FIELD-EFFECT TRANSISTOR |
| Description | The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz. MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3 & . |
| Features | . |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF134 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
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| 2 | MRF134 |
Motorola |
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| 3 | MRF136Y |
Motorola |
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| 4 | MRF137 |
Tyco Electronics |
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| 5 | MRF137 |
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| 6 | MRF137 |
MA-COM |
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| 7 | MRF13750H |
NXP |
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| 8 | MRF13750HS |
NXP |
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| 9 | MRF10005 |
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| 10 | MRF10005 |
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