MTP50N06EL |
Part Number | MTP50N06EL |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06EL/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP50N06EL Motorola Preferred Device N–Channel Enhance... |
Features |
= 0.028 OHM
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D
G S
CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 50 Apk, L = 0.32 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junc... |
Document |
MTP50N06EL Data Sheet
PDF 232.48KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTP50N06V |
Motorola |
N-Channel Power FET | |
2 | MTP50N06VL |
Motorola |
N-Channel Power FET | |
3 | MTP50N05E |
Motorola |
N-Channel Power FET | |
4 | MTP50008 |
nELL |
Three-Phase Bridge Rectifier | |
5 | MTP50010 |
nELL |
Three-Phase Bridge Rectifier | |
6 | MTP50012 |
nELL |
Three-Phase Bridge Rectifier |