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MTP50N06V |
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| Part Number | MTP50N06V |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS. |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Curren. |
| Datasheet |
 MTP50N06V Data Sheet
PDF 179.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP50N06EL |
Motorola |
N-Channel Power FET |
|
| 2 | MTP50N06VL |
Motorola |
N-Channel Power FET |
|
| 3 | MTP50N05E |
Motorola |
N-Channel Power FET |
|
| 4 | MTP50008 |
nELL |
Three-Phase Bridge Rectifier |
|
| 5 | MTP50010 |
nELL |
Three-Phase Bridge Rectifier |
|
| 6 | MTP50012 |
nELL |
Three-Phase Bridge Rectifier |
|
| 7 | MTP50016 |
nELL |
Three-Phase Bridge Rectifier |
|
| 8 | MTP50018 |
nELL |
Three-Phase Bridge Rectifier |
|
| 9 | MTP50P03HDL |
Motorola |
TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM |
|
| 10 | MTP50P03HDLG |
ON Semiconductor |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|