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2SC3007 |
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| Part Number | 2SC3007 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Low Collector Saturation Voltage : VC E(sat)=0.5V(Max.) at I C=1A . Hi... |
| Features |
. Low Collector Saturation Voltage
: VC E(sat)=0.5V(Max.) at I C=1A . High Speed Switching Time : t s tg=l - O^ts (Typ . )
INDUSTRIAL APPLICATIONS Unit in mm
09.3 9 MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic IB PC
T
J
T stg
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
lEBO V (BR... |
| Document |
 2SC3007 Data Sheet
PDF 110.85KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3000 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3001 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 3 | 2SC3006 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 4 | 2SC3011 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor |
|
| 5 | 2SC3011 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 6 | 2SC3012 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|