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MRF429 |
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| Part Number | MRF429 |
| Manufacturer | Motorola |
| Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF429/D NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier f... |
| Features |
°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.75 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued) RF DEVICE DATA ©MOTOROLA Motorola,... |
| Document |
 MRF429 Data Sheet
PDF 141.35KB |
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