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| Part Number | MRF422 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MRF422 |
| Manufacturer | MA-COM |
| Title | The RF Line NPN Silicon Power Transistor |
| Description | MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designed primarily for applications as a high–power linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation d. |
| Features | . |
| Part Number | MRF422 |
| Manufacturer | Motorola |
| Title | RF POWER TRANSISTORS |
| Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF422/D NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB . |
| Features |
AL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC =. |
| Part Number | MRF422 |
| Manufacturer | Tyco Electronics |
| Title | The RF Line NPN Silicon RF Power Transistor |
| Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF422/D The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficienc. |
| Features |
ERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) V(B. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF421 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 2 | MRF421 |
Motorola |
RF POWER TRANSISTORS |
|
| 3 | MRF422MP |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
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| 4 | MRF426 |
Motorola |
RF POWER TRANSISTOR |
|
| 5 | MRF426 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 6 | MRF427 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 7 | MRF428 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 8 | MRF429 |
Motorola |
RF POWER TRANSISTOR |
|
| 9 | MRF429 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 10 | MRF429 |
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
Desde 2024. D4U Semiconductor.
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