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MRF426 |
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| Part Number | MRF426 |
| Manufacturer | Motorola |
| Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF426/D NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30... |
| Features |
esistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES 35 65 4.0 — — — — — — — — 10 Vdc Vdc Vdc mAdc NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the ... |
| Document |
 MRF426 Data Sheet
PDF 112.41KB |
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