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MTB50N06EL |
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| Part Number | MTB50N06EL |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06EL/D Advance Information TMOS E-FET.™ Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOSāā™ā) N–Ch... |
| Features |
noted)
Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Symbol VDSS VDGR VGS ID ID IDM PD Value 60 60 ±15 50 28 142 125 1.0 2.5 – 55 to 150 400 1.0 62.5 50 260 Unit Vdc Vdc Vdc Adc Apk Watts W/°C Watts °C mJ °C/W Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 2... |
| Document |
 MTB50N06EL Data Sheet
PDF 97.83KB |
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