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IRFP450N International Rectifier Power MOSFET Datasheet

IRFP450N MOSFET Transistor, N-Channel, TO-247AC


International Rectifier
IRFP450N
Part Number IRFP450N
Manufacturer International Rectifier
Description PD- 94216 SMPS MOSFET IRFP450N HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l VDSS 500V Rds(on) max 0.37Ω ID 14A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dyna...
Features o transistor Forward Half Bridge and Full Bridge PFC Boost through … are on page 8 Notes  www.irf.com 1 1/17/02 IRFP450N Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500
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  – V VGS = 0V, ID = 250µA
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  – V/°C Reference...

Document Datasheet IRFP450N datasheet pdf (121.09KB)
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IRFP450NPBF
N채널 500V 14A(Tc) 200W(Tc) 스루홀 TO-247AC
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International Rectifier
IRFP450N
MOSFET Transistor, N-Channel, TO-247AC
7 units: 3 USD
3 units: 4 USD
1 units: 6 USD
Distributor
Quest Components

41 In Stock
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IRFP450N Similar Datasheet

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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 190 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.65 40 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCH...
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