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BSS110 |
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| Part Number | BSS110 |
| Manufacturer | Siemens Semiconductor |
| Description | BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS ... |
| Features |
25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
-50 -1.5 -0.1 -2 -1 5.3 -2
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-0.8
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -60 -0.1
µA
VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
-10
nA Ω 10
VGS = -20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = -10 V, ID = -0.17 A
Semiconductor Group
2
12/0... |
| Document |
 BSS110 Data Sheet
PDF 80.51KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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