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MPSW10 |
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| Part Number | MPSW10 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW10/D One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW10 1 2 3 MAXIMUM RATINGS Rating Collector – ... |
| Features |
oltage (IC = 100 µAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 — — — — — 0.2 0.1 Vdc Vdc Vdc µAdc µAdc v 300 ms, Duty Cycle v 2.0%. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSW10 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vd... |
| Document |
 MPSW10 Data Sheet
PDF 154.83KB |
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