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NE5514D |
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| Part Number | NE5514D |
| Manufacturer | Philips |
| Description | The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical... |
| Features |
–INPUT 2 OUTPUT 2 • Low input bias current: < ±3nA • Low input offset current: < ±3nA • Low input offset voltage:<1mV • Low supply current: 1.5mA/A • 1V/µs slew rate • High input impedance: 100MΩ • High common-mode impedance: 10GΩ • Internal compensation for unity gain • 600Ω drive capability (7VRMS) APPLICATIONS D Package1 OUTPUT 1 –INPUT 1 +INPUT 1 V+ NC +INPUT 2 –INPUT 2 OUTPUT 2 1 2 3 4 5 6 7 8 3 4 1 2 16 OUTPUT 1 15 –INPUT 1 14 +INPUT 1 13 V – 12 NC 11 +INPUT 2 10 –INPUT 2 9 OUTPUT 2 • AC amplifiers • RC active filters • Transducer amplifiers • DC gain block • Instrumentation amplifier... |
| Document |
 NE5514D Data Sheet
PDF 54.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5514 |
Philips |
Quad high-performance operational amplifier |
|
| 2 | NE5514N |
Philips |
Quad high-performance operational amplifier |
|
| 3 | NE5510179A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 4 | NE5510279A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 5 | NE5511279A |
NEC |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| 6 | NE5511279A |
CEL |
7.5V OPERATION SILICON RF POWER LD-MOS FET |
|
| 7 | NE5512 |
Philips |
Dual high-performance operational amplifier |
|
| 8 | NE5512D |
Philips |
Dual high-performance operational amplifier |
|
| 9 | NE5512N |
Philips |
Dual high-performance operational amplifier |
|
| 10 | NE5517 |
Philips |
Dual operational transconductance amplifier |
|
Desde 2024. D4U Semiconductor.
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