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NE5512N |
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| Part Number | NE5512N |
| Manufacturer | Philips |
| Description | The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with impro... |
| Features |
D Package1
+ INPUT 1 V+INPUT 2 -INPUT 2 1 2 3 4 2 1 8 7 6 5 -INPUT 1 OUTPUT 1 V+ OUTPUT 2
TOP VIEW NOTE: 1. The D package pinout is not functionally identical to the N pinout.
• Low input bias < ±20nA • Low input offset current < ±20nA • Low input offset voltage <1mV • Low VOS temperature drift 5µV/°C • Low input bias temperature drift 40pA/°C • Low input voltage noise 30nV/√Hz • Low supply current 1.5mA/amp • High slew rate 1.0V/µs • High CMRR 100dB ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outline (SO) Package 8-Pin Plastic Dual In-Line Package (DIP) 8-Pin Plastic Small Outline... |
| Document |
 NE5512N Data Sheet
PDF 33.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5512 |
Philips |
Dual high-performance operational amplifier |
|
| 2 | NE5512D |
Philips |
Dual high-performance operational amplifier |
|
| 3 | NE5510179A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 4 | NE5510279A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 5 | NE5511279A |
NEC |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| 6 | NE5511279A |
CEL |
7.5V OPERATION SILICON RF POWER LD-MOS FET |
|
| 7 | NE5514 |
Philips |
Quad high-performance operational amplifier |
|
| 8 | NE5514D |
Philips |
Quad high-performance operational amplifier |
|
| 9 | NE5514N |
Philips |
Quad high-performance operational amplifier |
|
| 10 | NE5517 |
Philips |
Dual operational transconductance amplifier |
|
Desde 2024. D4U Semiconductor.
|