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MMBTA13LT1 |
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| Part Number | MMBTA13LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA13LT1/D Darlington Amplifier Transistors NPN Silicon COLLECTOR 3 BASE 1 MMBTA13LT1 MMBTA14LT1* *Motorola Preferred Device EMITTER... |
| Features |
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OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES ICBO IEBO 30 — — — 100 100 Vdc nAdc nAdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBTA13LT1 MMBTA14LT1 ELECTRICAL CHARACTERISTICS (... |
| Document |
 MMBTA13LT1 Data Sheet
PDF 235.66KB |
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