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MMBT5087LT1 |
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| Part Number | MMBT5087LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5087LT1/D Low Noise Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5087LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collec... |
| Features |
ter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) (VCB = –35 Vdc, IE = 0) 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO ICBO — — –10 –50 –50 –50 — — Vdc Vdc nAdc Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT5087LT1 ELECTRICAL CHARACTERISTICS (TA = 2... |
| Document |
 MMBT5087LT1 Data Sheet
PDF 406.51KB |
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