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PHE13009 |
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| Part Number | PHE13009 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulator... |
| Features |
accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 12 24 6 12 80 150 150 UNIT V V V A A A A W ˚C ˚C
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient... |
| Document |
 PHE13009 Data Sheet
PDF 59.81KB |
Similar Datasheet
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| 2 | PHE13003 |
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| 3 | PHE13003A |
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| 4 | PHE13003A |
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| 5 | PHE13003AU |
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| 6 | PHE13003C |
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Desde 2024. D4U Semiconductor.
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