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PHE13003 |
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| Part Number | PHE13003 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter. |
| Features | th the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 1.5 3 0.75 1.5 50 150 150 UNIT V V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free . |
| Datasheet |
 PHE13003 Data Sheet
PDF 49.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHE13002AU |
NXP |
Silicon Diffused Power Transistor |
|
| 2 | PHE13003A |
WeEn |
NPN power transistor |
|
| 3 | PHE13003A |
NXP |
NPN power transistor |
|
| 4 | PHE13003AU |
NXP |
Silicon Diffused Power Transistor |
|
| 5 | PHE13003C |
WeEn |
NPN power transistor |
|
| 6 | PHE13003C |
NXP |
NPN power transistor |
|
| 7 | PHE13005 |
NXP |
Silicon Diffused Power Transistor |
|
| 8 | PHE13005 |
WeEn |
Silicon diffused power transistor |
|
| 9 | PHE13005X |
NXP |
Silicon diffused power transistor |
|
| 10 | PHE13005X |
WeEn |
Silicon diffused power transistor |
|
Desde 2024. D4U Semiconductor.
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