RFP12N10 Intersil Corporation 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs Datasheet. existencias, precio

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RFP12N10

Intersil Corporation
RFP12N10
RFP12N10 RFP12N10
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Part Number RFP12N10
Manufacturer Intersil Corporation
Description RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors desi...
Features
• 12A, 80V and 100V
• rDS(ON) = 0.200Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N08 80 80 12 30 ±20 75 0.6 -55 to 150 300 260 RFM12N10 100 100 12 30 ±20 75 0.6 -55 to 150 300 260 RFP12N08 80 80 12 30 ±20 60 0.48 -55 t...

Document Datasheet RFP12N10 Data Sheet
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