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| Part Number | RFP12N10L |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RFP12N10L |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Logic Level Power MOSFET |
| Description | Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive. |
| Features |
• 12A, 100V • rDS(ON) = 0.200Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components. |
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| 1 | RFP12N10 |
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| 2 | RFP12N18 |
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| 3 | RFP12N06 |
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| 4 | RFP12N06RLE |
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| 5 | RFP12N06RLE |
Intersil Corporation |
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| 6 | RFP12N08 |
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| 7 | RFP12N20 |
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| 8 | RFP12P08 |
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| 9 | RFP12P10 |
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12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs |
|
| 10 | RFP10N12 |
GE Solid State |
(RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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