logo

RFP12N08 Intersil Corporation 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs Datasheet

RFP12N08 MOSFET Transistor, N-Channel, TO-220AB


Intersil Corporation
RFP12N08
Part Number RFP12N08
Manufacturer Intersil Corporation
Description RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, ...
Features
• 12A, 80V and 100V
• rDS(ON) = 0.200Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N08 80 80 12 30 ±20 75 0.6 -55 to 150 300 260 RFM12N10 100 100 12 30 ±20 75 0.6 -55 to 150 300 260 RFP12N08 80 80 12 30 ±20 60 0.48 -55 t...

Document Datasheet RFP12N08 datasheet pdf (43.21KB)
Distributor Distributor
Quest Components
Stock 10 In Stock
Price
1 units: 32.5 USD
BuyNow BuyNow BuyNow (Manufacturer a RCA)




RFP12N08 Distributor

part
RCA
RFP12N08
MOSFET Transistor, N-Channel, TO-220AB
1 units: 32.5 USD
Distributor
Quest Components

10 In Stock
BuyNow BuyNow





RFP12N08 Similar Datasheet

Part Number Description
RFP12N06
manufacturer
Fairchild Semiconductor
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE Features JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves RFD12N06RLE RFD12N06RLESM SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) RFP12N06RLE Ordering Information PART NUMBER PACKAGE TO-...
RFP12N06RLE
manufacturer
Fairchild Semiconductor
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE Features JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves RFD12N06RLE RFD12N06RLESM SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) RFP12N06RLE Ordering Information PART NUMBER PACKAGE TO-...
RFP12N06RLE
manufacturer
Intersil Corporation
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of paten...
RFP12N10
manufacturer
Intersil Corporation
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs
RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N10, transistors requiring high speed and low gate drive power. RFP12 These types can be operated directly from integrated N08, circuits. RFP12 Formerly developmental type TA09594. N10) /SubOrdering Information ject PART NUMBER PACKAGE BRAND (12A, 80V and RFM12N08 TO-204AA RFM12N08 100V, RFM12N10 TO-204AA RFM12N10 0.2 RFP12N08 TO-220AB RFP...
RFP12N10L
manufacturer
Fairchild Semiconductor
N-Channel Logic Level Power MOSFET
Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526. Ordering Information PART NUMBER PACKAGE RFP12N10L TO-220AB BRAND F12N10L Features • 1...
RFP12N10L
manufacturer
Intersil Corporation
12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET
only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.inters...
RFP12N18
manufacturer
Intersil Corporation
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20 G September 1998 Features • 12A, 180V and 200V • rDS(ON) = 0.250Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel ...
RFP12N20
manufacturer
Intersil Corporation
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20 G September 1998 Features • 12A, 180V and 200V • rDS(ON) = 0.250Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel ...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy