XN2501 |
Part Number | XN2501 |
Manufacturer | Panasonic Semiconductor |
Description | Composite Transistors XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements i... |
Features |
1
Composite Transistors
PT — Ta
500
60 Ta=25˚C IB=160µA
XN2501
IC — VCE
1200 VCE=10V Ta=25˚C 1000
IB — VBE
Total power dissipation PT (mW)
Collector current IC (mA)
400
50
40
120µA 100µA
Base current IB (µA)
140µA
800
300
30 80µA 20 60µA 40µA 10 20µA
600
200
400
100
200
0 0 40 80 120 160
0 0 2 4 6 8 10
0 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
IC — VBE
240 VCE=10V 200
200 240 VCE=10V Ta=25˚C
IC — I B
100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
30 10 3... |
Document |
XN2501 Data Sheet
PDF 33.45KB |
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