XN01110 |
Part Number | XN01110 |
Manufacturer | Panasonic Semiconductor |
Description | www.DataSheet4U.com Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by. |
Features |
1
DataSheet 4 U .com
www.DataSheet4U.com
Composite Transistors
PT — Ta
500
XN1110
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
–120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE= –10V –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB= –1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA –60 –0.2mA –40 –0.1mA –20 300 Ta=75˚C 200 25˚C –25˚C 100 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3. |
Datasheet |
XN01110 Data Sheet
PDF 162.29KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | XN01112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type For switching/digital circuits | |
2 | XN01114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
3 | XN01119 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
4 | XN01210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
5 | XN01211 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
6 | XN01212 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
7 | XN01215 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
8 | XN0121E |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
9 | XN01401 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
10 | XN01501 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type |