Busque con el número de pieza junto con el fabricante o la descripción
IRFBC30S |
Click to view a larger image
| Part Number | IRFBC30S |
| Manufacturer | International Rectifier |
| Description | Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is... |
| Features |
m Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
3.6 2.3 14 3.1 74 0.59 ± 20 290 3.6 7.4 3.0 -55 to + 150 300 (1.6mm from case )
Units
A W W W/°C V mJ A... |
| Document |
 IRFBC30S Data Sheet
PDF 362.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC30 |
Inchange Semiconductor |
TO-220C N-Channel MOSFET Transistor |
|
| 2 | IRFBC30 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 3 | IRFBC30 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFBC30 |
Vishay |
Power MOSFET |
|
| 5 | IRFBC30 |
INCHANGE |
TO-220 N-Channel MOSFET |
|
| 6 | IRFBC30A |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|