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IRFBC20S |
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| Part Number | IRFBC20S |
| Manufacturer | International Rectifier |
| Description | Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is... |
| Features |
m Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
2.2 1.4 8.0 3.1 50 0.40 ± 20 84 2.2 5.0 3.0 -55 to + 150 300 (1.6mm from case )
Units
A W W W/°C V mJ A... |
| Document |
 IRFBC20S Data Sheet
PDF 355.61KB |
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