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IRF7201 |
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| Part Number | IRF7201 |
| Manufacturer | International Rectifier |
| Description | l l S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.030Ω 3 6 4 5 Top View Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to ach... |
| Features |
or vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Stora... |
| Document |
 IRF7201 Data Sheet
PDF 114.27KB |
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Desde 2024. D4U Semiconductor.
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