Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | IRF720 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRF720 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
| Part Number | IRF720 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF720 Data Sheet July 1999 File Number 1579.4 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 3.3A, 400V • rDS(ON) = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF720 PACKAGE TO-220AB BRAND IRF720 Symbol D NOTE: When ordering, use the ent. |
| Part Number | IRF720 |
| Manufacturer | International Rectifier |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
| Part Number | IRF720 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to app. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling Available RoHS* COMPLIANT • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) te. |
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