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IRF654 |
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| Part Number | IRF654 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF654B 250 21 13.3 84 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS654B 21 * 13.3 * 84 * 700 21 15.6 5.5 Units V A A ... |
| Document |
 IRF654 Data Sheet
PDF 867.92KB |
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Desde 2024. D4U Semiconductor.
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