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IRF640A |
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| Part Number | IRF640A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ.)
1 2 3
IRF640A
BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A... |
| Document |
 IRF640A Data Sheet
PDF 260.95KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF640 |
NXP |
N-channel TrenchMOS transistor |
|
| 2 | IRF640 |
STMicroelectronics |
N-Channel MOSFET |
|
| 3 | IRF640 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF640 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | IRF640 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors |
|
| 6 | IRF640 |
Vishay |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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