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IRF530A |
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| Part Number | IRF530A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leak... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω(Typ.)
Ο
IRF530A
BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 14 9.9
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain Curr... |
| Document |
 IRF530A Data Sheet
PDF 254.86KB |
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