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IRF520N |
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| Part Number | IRF520N |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
9.7 6.8 38 48 0.32 ± 20 91 5.7 4.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink... |
| Document |
 IRF520N Data Sheet
PDF 116.90KB |
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Desde 2024. D4U Semiconductor.
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