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IRF510A |
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| Part Number | IRF510A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperatur... |
| Features |
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ.)
IRF510A
BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Aval... |
| Document |
 IRF510A Data Sheet
PDF 252.81KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF510 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF510 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 3 | IRF510 |
Vishay |
Power MOSFET |
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| 4 | IRF510 |
International Rectifier |
Power MOSFET |
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| 5 | IRF510PBF |
International Rectifier |
HEXFET POWER MOSFET |
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| 6 | IRF510S |
International Rectifier |
Power MOSFET |
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Desde 2024. D4U Semiconductor.
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