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IXTH11P50 |
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| Part Number | IXTH11P50 |
| Manufacturer | IXYS Corporation |
| Description | Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°... |
| Features |
z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance
- Easy to Drive and to Protect
Advantages
z Easy to Mount z Space Savings z High Power Density
© 2013 IXYS CORPORATION, All Rights Reserved
DS94535L(01/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4.7Ω (External) Qg(on) Qgs Qgd VGS... |
| Document |
 IXTH11P50 Data Sheet
PDF 130.12KB |
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Desde 2024. D4U Semiconductor.
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