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2SD1376 |
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| Part Number | 2SD1376 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1 1... |
| Features |
*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD Ton Toff 2 2SD1376(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 10 3 1.0 0.3 0.1 0.03 Ta = 25°C 1 shot pulse 0.01... |
| Document |
 2SD1376 Data Sheet
PDF 33.83KB |
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