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FDN359AN |
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| Part Number | FDN359AN |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior s... |
| Features |
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
SOIC-16
D
D
9A 35
S
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
Ratings Units
VDSS VGSS ID PD TJ,TSTG RθJA RθJC
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Not... |
| Document |
 FDN359AN Data Sheet
PDF 264.86KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN359AN |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDN359BN |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDN359BN |
Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET |
|
| 4 | FDN352AP |
Fairchild Semiconductor |
PowerTrench MOSFET |
|
| 5 | FDN352AP |
ON Semiconductor |
P-Channel MOSFET |
|
| 6 | FDN357N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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