Part Number | FDN357N |
Distributor | Stock | Price | Buy |
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Part Number | FDN357N |
Manufacturer | ON Semiconductor |
Title | N-Channel MOSFET |
Description | SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage . |
Features |
• 1.9 A, 30 V ♦ RDS(ON) = 0.09 W @ VGS = 4.5 V ♦ RDS(ON) = 0.06 W @ VGS = 10 V • Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical Capabilities • High Density Cell Design for Extremely Low RDS(ON) • Exceptional On−Resistance and Maximum DC Current Capability • This Device is Pb−Free and is RoHS Compliant ABSOLUTE MAXIMUM. |
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