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FDN358P |
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| Part Number | FDN358P |
| Manufacturer | Fairchild Semiconductor |
| Description | SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is esp... |
| Features |
-1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
8 35
S
G S
SuperSOT -3
TM
G
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage
TA = 25oC unless other wise noted FDN358P -30 ±20 -1.5 -5
(Note 1a) (... |
| Document |
 FDN358P Data Sheet
PDF 85.27KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN358P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDN352AP |
Fairchild Semiconductor |
PowerTrench MOSFET |
|
| 3 | FDN352AP |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDN357N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDN357N |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDN359AN |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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