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FDC634P |
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| Part Number | FDC634P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch ... |
| Features |
• –3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V RDS(ON) = 110 mΩ @ VGS = –2.5 V • Low gate charge (7.2 nC typical) • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Jun... |
| Document |
 FDC634P Data Sheet
PDF 157.87KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC634P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 3 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 4 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 5 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 6 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
Desde 2024. D4U Semiconductor.
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