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2SK2090 |
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| Part Number | 2SK2090 |
| Manufacturer | NEC |
| Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it ... |
| Features |
• Gate can be driven by 2.5 V • Because of its high input impedance, there’s no need to consider drive current 0.3 Marking 0.9 ±0.1 Marking: G22 EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode 0 to 0.1 PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW ≤ 10 ms, duty cycle ≤ 50 % VGS = 0 VDS = 0 TEST CONDITIONS... |
| Document |
 2SK2090 Data Sheet
PDF 59.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK209 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK209 |
UTC |
SILICON N-CHANNEL TRANSISTOR |
|
| 3 | 2SK2091 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 4 | 2SK2094 |
Rohm |
Small switching Transistors |
|
| 5 | 2SK2095N |
Rohm |
Small switching Transistors |
|
| 6 | 2SK2096 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK2096 |
Renesas |
Silicon N-Channel MOSFET |
|
| 8 | 2SK2097 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2098-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 10 | 2SK2099-01L |
Fuji Electric |
N-channel MOS-FET |
|
Desde 2024. D4U Semiconductor.
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