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2SJ187 |
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| Part Number | 2SJ187 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN3509A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Package Dimensions unit... |
| Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ187] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm) Elect... |
| Document |
 2SJ187 Data Sheet
PDF 97.53KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ180 |
NEC |
P-Channel MOSFET |
|
| 2 | 2SJ181 |
Renesas |
Silicon P-Channel MOSFET |
|
| 3 | 2SJ181 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 4 | 2SJ181 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 5 | 2SJ181L |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 6 | 2SJ181L |
Renesas |
Silicon P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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