2N5364 |
Part Number | 2N5364 |
Manufacturer | National Semiconductor |
Description | The 2N5361 thru 2N5364 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring tightly specified IdSS ranges. Absolute Maximum Ratings (25°o Gate-Drain or G... |
Features |
S VDS = 0, VQS--20V T= 150°C
2N5361
MIN MAX
-100
-100
2N5362
MIN MAX
-100
-100
2N5363
MIN MAX
100
-100
2N5364
MIN MAX
100
-100
UNITS pA nA
Gate-Source Cutoff VGS(off) .. .
Voltage
BVGSS
Gate-Source Breakdown Voitage
'DSS
Vqs
Saturation Drain Current Gate-Source Voltage
V DS = 15V, Id - 100 nA
VdS'O, GI = -10jiA Vqs= 15V, Vqs= 0, (Note 1) Vqs- 15V, Id = (Note 2)
-1.0
-6.0
2.0 -7.0 -2.5 -8.0 -2.5 -8.0
V
-40
-40
-40
-40
2.5
5.0
4.0
8.0
7.0
14.0
9.0
18.0
mA
-1.0 -5.0 -1.3 -6.0 -2.0 -6.0 -2.0 -6.0
V
Common-Source Forward Transconductance
f = 1 kHz
1500 4500 2000 550... |
Document |
2N5364 Data Sheet
PDF 27.62KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N5360 |
National Semiconductor |
N-Channel JFETs | |
2 | 2N5360 |
ETC |
Silicon N-channel junction field-effect transistors | |
3 | 2N5361 |
National Semiconductor |
N-Channel JFETs | |
4 | 2N5361 |
ETC |
Silicon N-channel junction field-effect transistors | |
5 | 2N5362 |
National Semiconductor |
N-Channel JFETs | |
6 | 2N5362 |
ETC |
Silicon N-channel junction field-effect transistors | |
7 | 2N5363 |
National Semiconductor |
N-Channel JFETs | |
8 | 2N5363 |
ETC |
Silicon N-channel junction field-effect transistors | |
9 | 2N5364 |
ETC |
Silicon N-channel junction field-effect transistors | |
10 | 2N5365 |
GE Solid State |
(2N5365 / 2N5366) SILICON TRANSISTORS |