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C3M0032120J1 |
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| Part Number | C3M0032120J1 |
| Manufacturer | Wolfspeed |
| Description | C3M0032120J1 Silicon Carbide Power C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • 3rd generation Silicon Carbide (SiC) MOSFET technology • Optimized packag... |
| Features |
(TAB)
• 3rd generation Silicon Carbide (SiC) MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant 1 234567 G DS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be mark... |
| Document |
 C3M0032120J1 Data Sheet
PDF 0.96MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3M0032120D |
CREE |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0032120D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0032120K |
CREE |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0032120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0030090K |
CREE |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0030090K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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