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C3M0032120D Silicon Carbide Power MOSFET

C3M0032120D

C3M0032120D
C3M0032120D C3M0032120D
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Part Number C3M0032120D
Manufacturer CREE
Description VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse.
Features Package
• 3rd generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances

• Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency Applications
• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies Part Number Package Marking C3M0032120D Maximum Ra.
Datasheet Datasheet C3M0032120D Data Sheet
PDF 786.19KB
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C3M0032120D

Wolfspeed
C3M0032120D
Part Number C3M0032120D
Manufacturer Wolfspeed
Title Silicon Carbide Power MOSFET
Description C3M0032120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen fr.
Features
• 3rd generation SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant 123 Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition pe.


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