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FDT439N |
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| Part Number | FDT439N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim... |
| Features |
• 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V • Fast switching speed. • High power and current handling capability in a widely used surface mount package. • This Device is Pb−Free Applications • DC/DC Converter • Load Switch • Motor Driving VDSS 30 V RDS(ON) MAX 0.045 W @ 4.5 V 0.058 W @ 2.5 V ID MAX 6.3 A D S D G SOT−223 CASE 318H MARKING DIAGRAM AYW 439G G 1 A = Specific Device Code Y = Date Code W = Work Week 439 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise note... |
| Document |
 FDT439N Data Sheet
PDF 201.79KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FDT439N |
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| 2 | FDT434P |
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| 4 | FDT457N |
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Desde 2024. D4U Semiconductor.
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